Combinatorial Synthesis of AlTiN Thin Films

Nitrides of aluminum (Al) and titanium (Ti) mixtures have long been studied used as commercial coatings because their high hardness oxidation resistance due to the formation an alumina layer on coating surface. To fully understand contribution Al Ti properties film, a combinatorial deposition approach was employed using half-disk targets. Film growth carried out magnetron sputtering system powered by 13.56 MHz radio frequency power supply with varying argon (Ar) nitrogen (N2) gas ratios. Depending location substrate relative target, atomic percent gradients 0.60–0.70 0.30–0.40 across surface were obtained from energy dispersive X-ray spectral analysis. diffraction peaks at 43.59°, 74.71° (face-centered cubic), 50.60° (wurtzite) confirmed presence nitride (AlTiN) mixtures, increasing amount wurtzite phase higher concentrations. For all samples, cauliflower-like nanograins samples 80:20 Ar:N2 pressure ratio showed smallest grain size among three combinations. The films revealed relatively compared other All thin exhibited good adhesion 304 stainless steel substrates.